Combining CCD and CMOS technologies allows for better image quality at ultra-high speeds
Imaging technology company SI Sensors has integrated charge-coupled device (CCD) technology with complementary metal-oxide-semiconductor (CMOS) image sensors.
Combining these two is known as CCD-in-CMOS and enhances the capabilities of burst mode imaging, allowing for ultra-fast capture speeds.
“Capable of recording at millions of frames per second with full resolution, this new generation of CCD-in-CMOS image sensors can provide capture speed with high signal-to-noise ratio, ensuring clear and detailed images of the fastest observable events,” said SI Sensors general manager Phil Brown.
“Adaptable to imaging applications ranging from high-speed video recording to hyperspectral imaging our CCD-in-CMOS technology enables efficient data handling through advanced in-situ storage, control and readout mechanisms that reduce system complexity,” he added.
CCD allow for signal to be stored in the charge domain before voltage conversion and digitisation. The frame capture speed of traditional image sensors is limited by these signal conversions.
CMOS technology enables system on chip architectures which integrate additional circuitry on the same chip. This reduces system cost and minimises complexity.
Combining both technologies allows for better image quality at ultra-high speeds.
Earlier this year, SI Sensors developed a service for the design, development and manufacture of custom CMOS sensors.
