IR-enhanced charged-coupled device image sensor

1st April 2013

Hamamatsu Photonics introduce the new S11510 series of Full Frame Transfer CCD (FFT-CCD) image sensors with ultra high sensitivity in the NIR region. Utilising Hamamatsu’s technology in laser processing, it is possible to form a MEMS structure on the back side of the CCD, which results in a much higher sensitivity at wavelengths longer than 800 nm.
The S11510 features quantum efficiency of 40 per cent at 1000nm, without the need for a deep depletion structure, with its corresponding drawback of higher dark signal. The S11510 series are available with 1024 or 2048 pixels, with each pixel measuring 14µm by 14µm.
In addition to high IR sensitivity, the S11510 series can be used as an image sensor with a long active area in the sensor height direction. This can be achieved using binning, making them suitable for Raman spectroscopy. These sensors also feature low etalation, which is often a problem in Raman applications, where a smooth, stable output is very important.
The S11510 series is similar in design to the conventional S10420-01 FFT-CCD and the two are pin compatible allowing for operation under the same drive conditions. This makes for a simple way to improve the NIR sensitivity of an existing image sensor or spectrometer.
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